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| IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOSTM3 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 150 7.2 100 V m A * Ideal for high-frequency switching and synchronous rectification * Halogen-free according to IEC61249-2-21 Type IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Package Marking PG-TO263-3 072N15N PG-TO220-3 075N15N PG-TO262-3 075N15N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse I D,pulse E AS T C=25 C I D=100 A, R GS=25 I D=100 A, V DS=120 V, di /dt =100 A/s, T j,max=175 C Value 100 93 400 780 mJ Unit A Reverse diode dv /dt dv /dt 6 kV/s Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) V GS P tot T j, T stg T C=25 C 20 300 -55 ... 175 55/175/56 V W C J-STD20 and JESD22 See figure 3 Rev. 2.06 page 1 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 0.5 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 A V DS=120 V, V GS=0 V, T j=25 C V DS=120 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, (TO220, TO262) V GS=10 V, I D=100 A, (TO263) V GS=8 V, I D=50 A, (TO220; TO262) V GS=8 V, I D=50 A, (TO263) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 150 2 3 0.1 4 1 A V - 10 1 6.2 100 100 7.5 nA m - 5.8 7.2 - 6.4 7.7 65 6.0 2.3 130 7.4 S 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.06 page 2 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) C iss C oss C rss t d(on) tr t d(off) tf V DD=75 V, V GS=10 V, I D=100 A, R G=1.6 V GS=0 V, V DS=75 V, f =1 MHz - 5470 638 10 25 35 46 14 38 52 69 21 pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=75 V, V GS=0 V V DD=75 V, I D=100 A, V GS=0 to 10 V - 30 11 25 70 5.5 179 40 17 35 93 239 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=75 V, I F=I S, di F/dt =100 A/s - 1 146 478 100 400 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.06 page 3 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 320 120 280 100 240 80 200 P tot [W] 160 I D [A] 0 50 100 150 200 60 120 40 80 20 40 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 1 s 10 s 100 s 1 ms 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 102 0.5 I D [A] 10 ms Z thJC [K/W] 101 DC 10-1 0.2 0.1 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.06 page 4 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 350 10 V 8V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 15 5V 300 5.5 V 7V 250 6.5 V 10 200 6V R DS(on) [m] 6V I D [A] 8V 150 10 V 5 100 5.5 V 50 5V 4.5 V 0 0 1 2 3 4 5 0 0 50 100 150 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. forward transconductance g fs=f(I D); T j=25 C 160 140 150 120 100 100 g fs [S] 25 C 175 C I D [A] 80 60 50 40 20 0 0 2 4 6 8 0 0 40 80 120 160 V GS [V] I D [A] Rev. 2.06 page 5 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 3.5 2700 A 15 3 270 A R DS(on) [m] 2.5 10 V GS(th) [V] typ 98% 2 1.5 5 1 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 103 103 102 175 C 25C, 98% C [pF] Coss I F [A] 175C, 98% 102 101 25 C 101 0 20 40 Crss 100 80 100 0 0.5 1 1.5 2 60 V DS [V] V SD [V] Rev. 2.06 page 6 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 1000 14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD 10 120 V 8 75 V 100 25 C 6 100 C 30 V V GS [V] 4 2 0 1000 I AS [A] 125 C 10 1 1 10 100 0 20 40 60 80 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 170 V GS 165 Qg 160 V BR(DSS) [V] 155 150 V g s(th) 145 140 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 135 T j [C] Rev. 2.06 page 7 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G PG-TO220-3: Outline Rev. 2.06 page 8 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G PG-TO263-3: Outline Rev. 2.06 page 9 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G PG-TO262-3: Outline Rev. 2.06 page 10 2010-04-19 IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com). on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.06 page 11 2010-04-19 |
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